Park Jae‐young | Device Engineering Team Dongbu Hitek Co. Ltd.

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著作論文

A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology(Session6: Power Devices)
DMOS-based avalanche-mode power-rail ESD clamp for a 0.35μm BCD process (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
DMOS-based avalanche-mode power-rail ESD clamp for a 0.35μm BCD process (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process(Session 7B : Si IC and Circuit Technology)
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology(Session6: Power Devices)
On-Chip Charged Device Model ESD Protection Design Method Using Very Fast Transmission Line Pulse System for RF ICs
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System
A Latchup-Free ESD Power Clamp Circuit with Stacked-Bipolar Devices for High-Voltage Integrated Circuits
A Non-snapback ESD Protection Clamp Circuit Using Isolated Parasitic Capacitance in a 0.35μm Bipolar-CMOS-DMOS Process

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