Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H_2/Cl_2, Ar/Cl_2 and BCl_3/Cl_2 Plasmas
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-03-01
著者
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Luo Yi
State Key Laboratory On Integrated Optoelectronics Tsinghua National Laboratory For Information Scie
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Wu Tong
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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HAO Zhi-Biao
State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua Universi
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Hao Zhi-biao
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Hao Zhi-biao
State Key Lab On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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Luo Yi
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Luo Yi
State Key Lab On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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TANG Guang
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua U
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Tang Guang
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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