Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method
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概要
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We have successfully implemented green and red light-emitting diodes (LEDs) based on InGaN/GaN quantum dots (QDs) grown by controlling the process of the growth interruption method using metal organic vapor phase epitaxy (MOVPE). It is found that the three-step growth interruption method and the underlying InGaN/GaN superlattice structure are beneficial for achieving greater indium incorporation in InGaN QDs. As a result, green and red LEDs with electroluminescence (EL) peak energies of 2.28 eV at 20 mA and 1.70 eV at 80 mA, respectively, are demonstrated. The EL emission energy blue shift of the green QD LEDs is 140 meV as injection current increases from 5 to 50 mA, while that of the red LED is 70 meV as injection current increases from 75 to 100 mA.
- 2013-08-25
著者
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WANG Lai
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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WANG Jiaxing
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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Hao Zhibiao
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Lv Wenbin
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Wang Lai
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Xing Yuchen
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Zheng Jiyuan
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Yang Di
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Yang Di
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Zheng Jiyuan
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Xing Yuchen
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Luo Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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