40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme
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概要
- 論文の詳細を見る
A 40 Gb/s transmitter module containing an AlGaInAs electroabsorption (EA) modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser has been fabricated using identical epitaxial layer (IEL) approach. Low loss coaxial-to-coplanar waveguide (CPW) transition is designed and fabricated for the module. By improving the quality of the anti-reflection (AR) coating on the EA modulator facet and optimizing the structure of the CPW transmission line, resonances in the frequency response of the module have been effectively suppressed. The module exhibits a small signal modulation bandwidth over 35 GHz, and clear eye opening has been demonstrated under 40 Gb/s nonreturn-to-zero (NRZ) code modulation.
- Japan Society of Applied Physicsの論文
- 2007-07-25
著者
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Wang Jian
State Key Lab Of Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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Luo Yi
State Key Lab On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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Xiong Bing
State Key Laboratory On Integrated Optoelectronics Tsinghua National Laboratory For Information Scie
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Huang Jin
State Key Laboratory On Integrated Optoelectronics Tsinghua National Laboratory For Information Scie
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CAI Peng-Fei
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua Universi
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Sun Chang-zheng
State Key Lab Of Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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Luo Yi
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Zhang Ming-Jun
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Xu Jian-Ming
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Liu Zhi-Zhi
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Xiong Bing
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Cai Peng-Fei
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Sun Chang-Zheng
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Xiong Bing
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Huang Jin
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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Xiong Bing
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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