Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas
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概要
- 論文の詳細を見る
A systematic study of the selective etching of GaN over Al0.28Ga0.72N was performed using Cl2/N2/O2 inductively coupled plasmas (ICP). Highly selective etching at high GaN etch rate is realized by optimizing the O2 flow rate, the ICP power and the chamber pressure. Maximum etching selectivity of about 60:1 at a GaN etch rate of 320 nm/min has been demonstrated. X-ray photoelectron spectroscopy (XPS) analysis shows that the effective oxidation of AlGaN due to the addition of a small fraction of O2 is crucial to obtain highly selective etching at high GaN etch rate.
- 2003-10-01
著者
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Han Yanjun
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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SUN Changzheng
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua Universi
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Hao Zhibiao
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Guo Wenping
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Xue Song
State Key Lab On Integrated Optoelectronics Dept. Of Electronic Engineering Tsinghua University
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Xue Song
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Hao Zhibiao
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Han Yanjun
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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