Effect of p–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
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概要
- 論文の詳細を見る
InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different p–n junction locations have been investigated by current–voltage ($I$–$V$), electroluminescence (EL), and capacitance–voltage ($C$–$V$) measurements. At 20 mA injection current, the operating voltage of the LEDs decreases by 0.15 V, the EL intensity increases by 14% and the EL wavelength shifts from 465 to 455 nm owing to the shortening of the distance between n-InGaN/GaN MQW and p-type materials. $C$–$V$ measurements indicate that only the quantum well immediately adjacent to the p-type region still remains inside the depletion region when LEDs are forward biased. Analysis reveals that the characteristics of the LEDs can be improved by optimizing the p–n junction location through the improvement of the holes' tunneling injection and weakening of the piezoelectric field in InGaN quantum wells.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Jiang Yang
State Key Laboratory On Integrated Optoelectronics/tsinghua National Laboratory For Information Scie
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LI Hongtao
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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WANG Lai
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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XI Guangyi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Scie
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Han Yanjun
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Luo Yi
State Key Lab On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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Zhao Wei
State Key Laboratory Of Fine Chemicals School Of Chemical Engineering Dalian University Of Technolog
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Luo Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Wang Lai
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Xi Guangyi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Jiang Yang
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Zhao Wei
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Li Hongtao
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Han Yanjun
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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