Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 Plasmas
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概要
- 論文の詳細を見る
In this paper, the etching properties of AlGaN/GaN heterostructures were studied by using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas. Atomic force microscope (AFM) measurement showed that distinct surface morphology were obtained using different gas chemistries. Ultra-smooth etched surface with the root-mean-square roughness of 0.851 nm has been achieved using BCl3/Cl2 chemistry, which is the best result for the etching of AlGaN/GaN heterostructure using inductively coupled plasma (ICP) to our knowledge. Surface analysis was then performed to understand the etching characteristics by Auger electron spectroscopy (AES). We find that the effective removal of oxygen from the etched surface of AlGaN layer during the etching process was a crucial factor in enhancing the surface morphology of the etched samples.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-01
著者
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Wu Tong
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Hao Zhi-biao
State Key Lab On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua University
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Tang Guang
State Key Laboratory On Integrated Optoelectronics Department Of Electronic Engineering Tsinghua Uni
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Wu Tong
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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Luo Yi
State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University
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Hao Zhi-Biao
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
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