Highly Oriented Polymer Field-Effect Transistors with High Electrical Stability
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概要
- 論文の詳細を見る
Oriented polymer field-effect transistors (FETs) with a top-gate configuration have been fabricated using amorphous fluoropolymers as gate insulators. The oriented poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) FETs exhibit a high mobility anisotropy of 13 and a high mobility of 0.043 cm<sup>2</sup>\cdotV<sup>-1</sup>\cdots<sup>-1</sup>for charge transport parallel to the alignment direction. The temperature dependence of the mobility reveals small disorder in the oriented F8T2 microstructure at the interface with the fluoropolymer gate insulator. The transfer characteristics show no hysteresis or threshold voltage shift after applying a gate bias stress.
- 2013-12-25
著者
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Nagase Takashi
Department Of Gerontological Nursing/wound Care Management Graduate School Of Medicine The University Of Tokyo
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KOBAYASHI Takashi
Department of Applied Physics,Faculty of Engineering,Nagoya University
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ENDO TOSHIYUKI
Department of Biological Science and Technology, Biosystems Engineering,Institute of Technology and Science, The University of Tokushima
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NAITO Hiroyoshi
Department of Anatomy, Tokyo Dental College
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