Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors with Silsesquioxane Gate Insulators
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概要
- 論文の詳細を見る
The preparation of organic–inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol–gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over $10^{14}$ $\Omega$ cm even at a low thermal treatment of 150 °C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO2 gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO2 dielectrics.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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MURAKAMI Shuichi
Technology Research Institute of Osaka Prefecture
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Naito Hiroyoshi
Department Of Chemistry And Organosilicon Research Laboratory
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Tomatsu Kenji
Department Of Physics And Electronics Osaka Prefecture University
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Matsukawa Kimihiro
Osaka Municipal Technical Res. Inst. Osaka Jpn
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Hamada Takashi
Department Fo Systems Design Engineering Graduate School Of Engineering Kanazawa Institute Of Techno
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Nagase Takashi
Department Of Gerontological Nursing/wound Care Management Graduate School Of Medicine The University Of Tokyo
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Matsukawa Kimihiro
Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8533, Japan
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KOBAYASHI Takashi
Department of Applied Physics,Faculty of Engineering,Nagoya University
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Yamazaki Saori
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan
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Naito Hiroyoshi
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan
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NAITO Hiroyoshi
Department of Anatomy, Tokyo Dental College
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