Solution-Processed Dioctylbenzothienobenzothiophene-Based Top-Gate Organic Transistors with High Mobility, Low Threshold Voltage, and High Electrical Stability

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Dioctylbenzothieno[2,3-b]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with a top-gate configuration, having fluoropolymer gate insulators, are fabricated by means of a spin-coating technique. The device fabrication is simple, and it enables us to obtain C8-BTBT FETs having high field-effect mobility ($\mu_{\text{FET}}$), low threshold voltage ($V_{\text{th}}$), and high electrical stability. We fabricate 116 top-gate C8-BTBT FETs having $\mu_{\text{FET}}$ of $1.59\pm 0.40$ cm2 V-1 s-1 and $V_{\text{th}}$ of $-1.48\pm 3.02$ V, and the maximum $\mu_{\text{FET}}$ is approximately 3 cm2 V-1 s-1. No changes in the devices characteristics are observed after applying a negative gate bias stress of $-1.2$ MV/cm for $10^{4}$ s.
2010-12-25