28aTN-7 C_8-BTBTのFETデバイスにおける電場誘起ESR信号のシミュレーション解析(28aTN 界面デバイス,領域7(分子性固体・有機導体))

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概要

• 論文の詳細を見る
• 2011-03-03

著者

• 瀧宮 和男

  広島大工

• 伊東 裕

  名大院工

• 黒田 新一

  名大院工

• 田中 久暁

  名大院工

• 渡辺 峻一郎

  名大院工

• 瀧宮 和男

  広大院工

• 下位 幸弘

  産総研ナノテク

• 渡辺 峻一郎

  名大院工応物

• Takimiya Kazuo

  Department Of Applied Chemistry Faculty Of Engineering Hiroshima University

• 小塚 真人

  名大院工

• Tanaka K

  Kyoto Univ. Kyoto

• Takahashi Kazuyuki

  Institute For Molecular Science And Crest Japan Science And Technology Agency

• 下位 幸弘

  産総研ナノシステム

• 渡辺 峻一郎

  ケンブリッジ大

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