ナノ量子ビームによるナノ微細構造の創出と探索 (特集 大阪大学産業科学研究所 マテリアルインテグレーション--材料・生体・情報の融合を目指して(3))
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- 28pSH-6 フォトニック結晶による可視域放射光の発生
- Effect of inhomogeneous acid distribution on line edge roughness- relationship to line edge roughness originating from chemical gradient
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Pulse Radiolysis Studies on Radiation Damage of DNA
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
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- 低速陽電子の高輝度化
- 阪大産研における低速陽電子ビームの短パルス化
- 高輝度サブピコ秒電子シングルバンチの生成と利用
- Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation
- 28a-K-3 高輝度陽電子ビームの生成
- 28a-K-2 阪大産研における低速陽電子ビームの短パルス化
- Effects of Impurities on Processes of Acid Generation in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- 12a-E-2 FEL基礎研究用アンジュレーターの特性
- 陽電子消滅寿命測定法および熱分析を用いた生体高分子ゲルの膨潤過程の解析
- 低速陽電子ビームによる高分子のナノ空孔の研究
- 高速電子に対するイメージングプレートの感度較正
- ナノ量子ビームによるナノ微細構造の創出と探索 (特集 大阪大学産業科学研究所 マテリアルインテグレーション--材料・生体・情報の融合を目指して(3))
- 極低温用エポキシ基ハイブリッド材料の開発 : 陽電子消滅法の応用
- 電子線型加速器を用いた低速陽電子ビームの発生・輸送
- ^Naを線源とする材料表面解析用電場輸送型低速陽電子ビーム発生装置
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film
- Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists for Extreme Ultraviolet Lithography
- Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
- Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Sensitization distance and acid generation efficiency in a model system of chemically amplified electron beam resist with methacrylate backbone polymer
- Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography : Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Electron Dynamics in Chemically Amplified Resists
- プロトン照射したPADC検出器表面上液滴の接触角異常
- Radiation Chemistry of Triphenylsulfonium Salts in EB and X-ray Chemically Amplified Resists-Proton Generation Mechanisms
- Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
- Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Dissolution kinetics in chemically amplified EUV resist
- イオン照射したPADC固体飛跡検出器の表面特性評価
- Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer
- γ線及び電子線照射によるCR-39飛跡検出器の特性変化
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- Dissolution Kinetics in Polymer-Bound and Polymer-Blended Photo-Acid Generators
- Basic Aspects of Acid Generation Process in Chemically Amplified Electron Beam Resist
- PADC飛跡検出器中に形成される重イオントラックの構造分析