A Novel Alicyclic Polymers for 193nm Single Layer Resist Materials
スポンサーリンク
概要
著者
-
白 基鎬
Semiconductor Research Div. Hyundai Electronics Industries Co. Ltd.
-
Baik K‐h
Hyundai Electronics Ind. Co. Ltd. Kyungki‐do Kor
-
Jung M‐h
Samsung Electronics Co. Ltd. Gyungki‐do Kor
-
Baik Ki-ho
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
-
Jung J‐c
Hyundai Electronics Ind. Co. Ltd. Kyoungki‐do Kor
-
Jung Min-ho
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
関連論文
- Application of a New Empirical Model to the Electron Beam Lithography Process with Chemically Amplified Resists
- Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers
- Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers
- TSI工程によるアイソレイシン構造の具現
- Optical Proximity Correction Using Diffused Aerial Image Model
- Optical Proximity Correction Using Diffused Aerial Image Model
- Optical Proximity Correction Using Diffused Aerial Image Model
- 光近接補正にたいする超薄膜レジストの近似モデル
- A Novel Alicyclic Polymers for 193nm Single Layer Resist Materials
- TiN Etching and Its Effects on Tungsten Etching in SF_6/Ar Helicon Plasma
- Effect of Additive Gases on Dimension Control during Cl_2-Based Polysilicon Gate Etching
- Synthesis and Characterization of Alicyclic Polymers with Hydrophilic Groups for 193 nm Single-Layer Resist
- Sub-100nm Lithographic Performance of Novel Electron Beam Resist
- Sub-100nm Lithographic Performance of Novel Electron Beam Resist
- Sub-100nm Lithographic Performance of Novel Electron Beam Resist
- Novel Organic Bottom Antireflective Coating Materials for 193nm Lithography
- Optical Lithography for Sub-100nm Technology
- Novel Approach for the Improvement of Post Exposure Delay Stability in ArF Resist Composed of Alicyclic Polymer