TiN Etching and Its Effects on Tungsten Etching in SF_6/Ar Helicon Plasma
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-15
著者
-
BAIK Ki-Ho
Semiconductor Research Div., Hyundai Electronics Industries Co. Ltd.
-
Baik Ki-ho
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
-
Baik Ki-ho
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
-
CHOI Chang
Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd.
-
SEOL Yeo
Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd.
-
Seol Yeo
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
-
Choi Chang
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
関連論文
- Application of a New Empirical Model to the Electron Beam Lithography Process with Chemically Amplified Resists
- Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers
- Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers
- Optical Proximity Correction Using Diffused Aerial Image Model
- Optical Proximity Correction Using Diffused Aerial Image Model
- Optical Proximity Correction Using Diffused Aerial Image Model
- 光近接補正にたいする超薄膜レジストの近似モデル
- A Novel Alicyclic Polymers for 193nm Single Layer Resist Materials
- TiN Etching and Its Effects on Tungsten Etching in SF_6/Ar Helicon Plasma
- Effect of Additive Gases on Dimension Control during Cl_2-Based Polysilicon Gate Etching
- Synthesis and Characterization of Alicyclic Polymers with Hydrophilic Groups for 193 nm Single-Layer Resist
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Sub-100nm Lithographic Performance of Novel Electron Beam Resist
- Sub-100nm Lithographic Performance of Novel Electron Beam Resist
- Sub-100nm Lithographic Performance of Novel Electron Beam Resist
- Novel Organic Bottom Antireflective Coating Materials for 193nm Lithography
- Optical Lithography for Sub-100nm Technology
- Novel Approach for the Improvement of Post Exposure Delay Stability in ArF Resist Composed of Alicyclic Polymer
- Negative Ion Formation in SiO_2 Etching Using a Pulsed Inductively Coupled Plasma