Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch

概要

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Effects of plasma etching on the characteristics of a SrBi_2Ta_2O_9 (SBT) ferroelectric capacitor with Pi electrodes have been investigated. A TiN film was chosen as an interconnecting metal layer and was etched in an electron cyclotron resonance (ECR) etcher with Cl_2/BCl_3 plasma. The control parameters used for our designed experiments of the metal etch process are RF bias power, microwave source power, and pressure. The etching parameters exert little effects on the remanent polarization and coercive voltage of the ferroelectric capacitor. However, they cause a significant voltage shift in the ferroelectric hysteresis loop. It is found that the voltage shift is induced by electron accumulation during the plasma etching. The electron charging effect is studied using antenna structures and the voltage shift is correlated with electron density of the plasma.
社団法人電子情報通信学会の論文
1999-07-23