Negative Ion Formation in SiO_2 Etching Using a Pulsed Inductively Coupled Plasma
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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CHOI Chang
Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd.
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SEOL Yeo
Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd.
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Seol Y
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Seol Yeo
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
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Choi C
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Choi Chang
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Seol Yeo
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Choi Chang
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
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KWON O
Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd.
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Kwon O
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
関連論文
- TiN Etching and Its Effects on Tungsten Etching in SF_6/Ar Helicon Plasma
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Negative Ion Formation in SiO_2 Etching Using a Pulsed Inductively Coupled Plasma