Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes

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概要

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• Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigated in InGaN blue light-emitting diodes (LEDs). Each radiative and nonradiative current components were separated from the total current by using the information of the internal quantum efficiency (IQE), obtained from the temperature-dependent electroluminescence measurement. By analyzing voltage and light output power as functions of nonradiative current, we were able to understand that the dominant nonradiative mechanisms of the LEDs vary with the competing mechanisms of Shockley--Read--Hall or tunneling recombination at low current density to the carrier overflow at high current density, inducing the IQE droop.

• 2013-05-25

著者

• Shin Dong-soo

  Deparment Of Chemistry Changwon National University

• Shim Jong-In

  Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea

• Kim Kyu

  Department of Applied Physics and Electronics, Sangji Univeristy, Wonju, Gangwon 220-702, Korea

• Choi Il-Gyun

  Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea

• Han Dong-Pyo

  Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea

• Yun Joosun

  Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea

• Choi Il-Gyun

  Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea

• Shin Dong-Soo

  Department of Applied Physics, Hanyang University, Ansan, Gyeonggi 426-791, Korea

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