Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
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概要
著者
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Shim Jong-In
Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea
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Ryu Han-Youl
Department of Physics, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Choi Il-Gyun
Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
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Choi Hyo-Sik
Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
関連論文
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
- Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes (Special Issue : Recent Advances in Nitride Semiconductors)
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes