Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
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概要
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Light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and vertical LED structures, LEE is obtained to be {<}10% due to strong DUV light absorption in the p-GaN layer. In flip-chip LEDs, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of DUV LEDs with decreasing wavelength. It is also found that vertical LED structures can have advantages over flip-chip structures for increasing LEE in the TM mode.
- 2013-06-25
著者
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Shim Jong-In
Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea
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Ryu Han-Youl
Department of Physics, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Choi Il-Gyun
Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
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Choi Hyo-Sik
Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
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Ryu Han-Youl
Department of Physics, Inha University, Incheon 402-751, Korea
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- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
- Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes (Special Issue : Recent Advances in Nitride Semiconductors)
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
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