Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes

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概要

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• We investigate the impacts of quantum-well (QW) shapes on the performance of InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrates. Three different QW shapes are utilized, namely, rectangular, staircase, and trapezoidal QWs of thicknesses of 4, 5, and 6 nm. Various optoelectronic measurements are conducted on these samples to determine the correlation of the effect of piezoelectric field with device performances. It is found that the staircase QW consistently shows the reduced effect of piezoelectric field, which agrees well with the simulation results of the increased electron--hole overlap integral over the conventional rectangular QW. The nonconventional QW can reduce the effect of piezoelectric field and improve the LED performance accordingly.

• 2013-08-25

著者

• Shin Dong-soo

  Deparment Of Chemistry Changwon National University

• Shim Jong-In

  Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea

• Han Dong-Pyo

  Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea

• Han Dae-Seob

  LG Innotek, Paju, Gyeonggi 413-901, Korea

• Moon Yong-Tae

  LG Innotek, Paju, Gyeonggi 413-901, Korea

• Park Joong

  LG Innotek, Paju, Gyeonggi 413-901, Korea

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