Sensitivities of the InGaAs/InGaAsP/InGaAsP Intrastep Quantum Well to Thickness and Composition Variations for Realizing Efficient Electroabsorption Modulators
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概要
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We examine the sensitivities of the intrastep-quantum-well (IQW) structure with an InGaAs well to the thickness and composition variations. With the layer variations into account, we evaluate the changes in absorption coefficient as a function of electric field and the subsequent transfer functions of the electroabsorption modulator. It is concluded that the examined IQW structure is rather sensitive to the thickness variation but is robust to the composition variation. This work suggests that the thickness control is very important in actually growing the IQW structure to obtain the desired performance with the IQW.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
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Shin Dong-soo
Deparment Of Chemistry Changwon National University
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Shin Dong-Soo
Department of Applied Physics, Hanyang University, Ansan, Gyeonggi-do 426-791, Korea
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Kim Kangbaek
Department of Applied Physics, Hanyang University, Ansan, Gyeonggi-do 426-791, Korea
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