Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
-
Shin Dong-soo
Deparment Of Chemistry Changwon National University
-
Shim Jong-In
Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea
-
Han Dong-Pyo
Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
-
Han Dong-Pyo
Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi 426-791, Korea
-
Han Dae-Seob
LG Innotek, Paju, Gyeonggi 413-901, Korea
-
Moon Yong-Tae
LG Innotek, Paju, Gyeonggi 413-901, Korea
-
Park Joong
LG Innotek, Paju, Gyeonggi 413-901, Korea
関連論文
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- Synthesis and Biological Evaluation of Pyridooxazine-Tetrahydroisoquinoline Derivatives as MDR Modulators
- Optical Properties of Eu^3+ in Yttrium Oxide Crystals Prepared by a Forced Hydrolysis Method
- Optimum Biasing for 45 nm Node Chromeless and Attenuated Phase Shift Mask
- Chirp Parameter of Electroabsorption Modulators with InGaAsP Intrastep Quantum Wells
- Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation
- Ellipsometry for Pellicle-Covered Surface
- Ion Transport in a Reflective Liquid-Crystal-on-Silicon Microdisplay Cell
- Optoelectronic Mixing in Electroabsorption Waveguides under Very High Optical Power
- High-Optical-Power Operation of the Electroabsorption-Modulated Laser and Subsequent Changes in Eye Diagram and 3-dB Bandwidth
- Small-Signal Analysis of the Voltage-Dependent Nonlinearity in High-Power Uni-Traveling-Carrier Photodiodes
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
- Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes (Special Issue : Recent Advances in Nitride Semiconductors)
- Sensitivities of the InGaAs/InGaAsP/InGaAsP Intrastep Quantum Well to Thickness and Composition Variations for Realizing Efficient Electroabsorption Modulators
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
- Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes