Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity
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概要
- 論文の詳細を見る
Escape times of photogenerated charge carriers from an InGaAsP intrastep quantum well (IQW) are calculated and compared with those from a conventional quantum well (QW). Since the red shift of the IQW is initiated at a higher electric field, the escape times from the IQW are smaller than those from the conventional QW at given values in modulator transmission. From the reduction in escape times, improvements in the exciton saturation intensity are estimated to be a factor of ${\sim}5$ for both high and low modulator-transmission points.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Shin Dong-soo
Deparment Of Chemistry Changwon National University
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Shin Dong-Soo
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, U.S.A.
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- Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes