Choi Il-Gyun | Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
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概要
- Choi Il-Gyunの詳細を見る
- 同名の論文著者
- Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Koreaの論文著者
関連著者
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Shim Jong-In
Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea
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Choi Il-Gyun
Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
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Shin Dong-soo
Deparment Of Chemistry Changwon National University
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Ryu Han-Youl
Department of Physics, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Kim Kyu
Department of Applied Physics and Electronics, Sangji Univeristy, Wonju, Gangwon 220-702, Korea
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Choi Il-Gyun
Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
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Han Dong-Pyo
Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
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Yun Joosun
Department of Electronics and Communication Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
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Choi Hyo-Sik
Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791, Korea
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Shin Dong-Soo
Department of Applied Physics, Hanyang University, Ansan, Gyeonggi 426-791, Korea
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Ryu Han-Youl
Department of Physics, Inha University, Incheon 402-751, Korea
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HAN Dong-Pyo
Department of Electronics and Communication Engineering, Hanyang University
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YUN Joosun
Department of Electronics and Communication Engineering, Hanyang University
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CHOI Il-Gyun
Department of Electronics and Communication Engineering, Hanyang University
著作論文
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
- Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes