Gate Metal Dependent Reverse Leakage Mechanisms in AIGaN/GaN Schottky Diode
スポンサーリンク
概要
著者
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Kim Kyu
Department of Applied Physics and Electronics, Sangji Univeristy, Wonju, Gangwon 220-702, Korea
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Shin Jong-Hoon
IGBT Part, System IC R&D Laboratory, LG Electronics, Seoul 137-724, Korea
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Jang Tae-Hoon
IGBT Part, System IC R&D Laboratory, LG Electronics, Seoul 137-724, Korea
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Park Jinhong
IGBT Part, System IC R&D Laboratory, LG Electronics, Seoul 137-724, Korea
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Jang SeungYup
IGBT Part, System IC R&D Laboratory, LG Electronics, Seoul 137-724, Korea
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