Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization

概要

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Nanocrystalline silicon gratings were fabricated by applying both femtosecond-laser-interference crystallization and post thermal annealing to amorphous silicon (a-Si) nanoclusters embedded within a silicon nitride matrix. Catalytic chemical vapor deposition was used to fabricate the embedded a-Si nanoclusters, and the formation of a-Si nanoclusters was confirmed by photoluminescence spectroscopy. The femtosecond laser interference technique was employed to produce a seed pattern for the spatially-selected crystallization of a-Si nanoclusters. Micro-Raman spectroscopy and selected-area electron diffraction, together with high-resolution transmission-electron microscopy, show that nanocrystalline silicon gratings were formed through an amorphous-to-crystalline transformation with femtosecond laser pulses, and that the degree of crystallization was enhanced by applying post thermal annealing to the seed gratings.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-01-25