Young’s Modulus Enhancement of Mesoporous Pure-Silica–Zeolite Low-Dielectric-Constant Films by Ultraviolet and Silylation Treatments
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概要
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A Young’s modulus as high as 10 GPa and a dielectric constant of 2.18 was obtained by post-deposition ultraviolet and silylation treatments of a mesoporous pure-silica–zeolite low-dielectric-constant (low-$k$) film, while the dielectric constant value $k$ after the treatments remained as low as 2.18. Spin-on zeolite suspension was calcined at 400 °C, and a silylation treatment using 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) was then carried out. The film was irradiated with UV light with a wavelength of 254 nm followed by a second silylation treatment. After these treatments, an increased H–Si–O3 stretching peak and reduced OH-related peak in the infrared absorption spectra were observed, indicating the formation of a thicker Si–O polymer network with methyl groups on the pore wall surface.
- 2009-05-25
著者
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Hata Nobuhiro
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Yoshino Takenobu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Seino Yutaka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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Ohnuki Nobuyoshi
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Hata Nobuhiro
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Yoshino Takenobu
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Seino Yutaka
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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