Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C4F8 and Si2H6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics
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概要
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The Si2H6/He gas mixture was used for growing fluorinated amorphous carbon thin films (a-C:F) for low-dielectric-constant intermetallic-layer dielectrics by plasma-enhanced chemical vapor deposition (PECVD) with C4F8, which has a lower fluorine/carbon ratio than CF4. Si2H6 captures excessive fluorine ions and carries C4F8 to the substrate. It is also much safer than other carrier gases such as H2 or CH4. To characterize and improve film properties, we changed conditions such as deposition temperature and ambient pressure, and we measured the growth rate, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and $C$–$V$ characteristics. At a low temperature, the film properties were very poor, although the growth rate was very high. On the other hand, the growth rate was low at a high temperature. The growth rate increased with deposition pressure. The XPS result showed that the carbon peaks shifted to a higher energy level due to a carbon-fluorine combination, and the FT-IR results showed a bonding between C–F and C–F2. The dielectric constants of the samples were in the range of 1.5–5 and the sample with a constant of 2.18 showed relatively good thermal characteristics.
- 2005-07-15
著者
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Shin Jang-kyoo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:school Of Ele
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Lee Gil
Department Of Chemical And Biological Engineering Korea University
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Kwon Dae-hyuk
School Of Electronic And Information Engineering Kyungil University
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Seo Hwa-il
School Of Information Technology Korea University Of Technology And Education
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Kim Howoon
Department Of Electronics Kyungpook National University
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Seo Hwa-Il
School of Information Technology, Korea University of Technology and Education, Chungnam 330-708, Korea
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Shin Jang-Kyoo
Department of Electronics, Kyungpook National University, Daegu 702-701, Korea
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Kwon Dae-Hyuk
School of Electronic and Information Engineering, Kyungil University, Gyungbuk 712-904, Korea
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Kim Howoon
Department of Electronics, Kyungpook National University, Daegu 702-701, Korea
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