Active Pixel Sensor Using a $1\times 16$ Nano-Wire Photodetector Array for Complementary Metal Oxide Semiconductor Imagers

概要

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In this paper, a novel photodetector using an N-channel metal oxide semiconductor field effect transistor (NMOSFET) with a 30 nm-wide silicon nano-wire is described. The photodetector was fabricated on silicon-on-insulator (SOI) substrate and its wire was patterned by optical lithography, electron beam lithography and thermal oxidation. At room temperature, the device has similar $I_{\text{DS}}$-$V_{\text{DS}}$ characteristics to a general NMOSFET when incident light is supplied instead of the gate voltage. A maximum responsivity of higher than $1\times 10^{2}$ A/W and optical transient time of 80 μs have been obtained. Additionally, for the purpose of demonstrating the feasibility of the new device application, a $1\times 16$ complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) connected with the novel photodetector array was also designed and fabricated using 1-poly and 2-metal 1.5 μm CMOS technology. It is confirmed that this photodetector with high sensitivity as well as nano-scaled area could be applied to an image acquisition system for low illumination level.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-04-15