Epitaxial Growth of Spatially Inverted GaP for Quasi Phase Matched Nonlinear Optical Devices
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概要
- 論文の詳細を見る
We have succeeded in growing spatially inverted GaP epilayers by sublattice reversal epitaxy technique. The spatially inverted GaP epilayers can be grown reproducibly on Si interlayers deposited on GaP (100) substrates tilted toward [011]. We suggest the origin of sublattice reversal in GaP is self-annihilation of antiphase boundaries dominantly formed by Ga–Ga bonds.
- Japan Society of Applied Physicsの論文
- 2007-05-25
著者
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Yamamoto Takahisa
Department Of Advance Materials Science School Of Frontier Sciences The University Of Tokyo
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Matsushita Tomonori
Department Of Materials Engineering The University Of Tokyo
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Kondo Takashi
Department Of Agricultural Chemistry The University Of Tokyo
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Matsushita Tomonori
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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