Influence of Anisotropic Diffusion of Ga Atoms on GaAs Growth on Alternately Inverted (100) Substrates
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概要
- 論文の詳細を見る
Growth-rate distributions of GaAs on alternately inverted GaAs substrates have been investigated. Periodic thickness variations of GaAs grown by molecular beam epitaxy (MBE) on planarized surfaces of alternately inverted GaAs(100) substrates are caused by the anisotropic surface diffusion of Ga atoms. Simulation based on a simple diffusion-equation analysis that takes account of the anisotropic diffusion agrees quite well with the measured temperature dependence of the growth-rate distribution. We have also shown that practically flat GaAs surfaces can be attained by MBE growth at 300°C, where diffusion anisotropy is negligibly small.
- Japan Society of Applied Physicsの論文
- 2005-11-10
著者
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Kondo Takashi
Department Of Diagnostic Radiology Tohoku University School Of Medicine
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Koitabashi Tsutomu
Department Of Materials Engineering The University Of Tokyo
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Yamamura Takuji
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654
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Matsushita Tomonori
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654
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Kondo Takashi
Department Of Chemical Engineering Waseda University
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Kondo Takashi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Matsushita Tomonori
Department Of Materials Engineering The University Of Tokyo
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Yamamura Takuji
Department Of Materials Engineering The University Of Tokyo
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Kondo Takashi
Department Of Agricultural Chemistry The University Of Tokyo
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