Growth of Diamond from Si-Containing Amorphous Carbon Film Using Synchrotron Radiation
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概要
- 論文の詳細を見る
Si-doped amorphous carbon film prepared by the simultaneous vacuum evaporation of carbon and silicon has been irradiated by a synchrotron radiation (SR) beam. The preferential growth of diamond crystals was found by transmission electron microscope observation conducted after SR irradiation. It was also found that the solid-solution phase of carbon and silicon with the diamond structure was produced in the as-deposited film and at the initial stage of the crystallization. The solid-solution crystal remained in the stable phase up to 6 nm in size. The catalytic effect of Si was prominent in the growth of diamond.
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
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OOMOTO Masayuki
Department of Physics, Ritsumeikan University
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Kimura Yuki
Department Of Applied Physics University Of Miyazaki
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Ogawa Koji
Department Of Anesthesiology Wakayama Medical University
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Namba Hidetoshi
Department Of Physical Sciences Ritsumeikan University
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Kaito Chihiro
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Kido Osamu
Department Nanophysics In Frontier Projects Ritsumeikan University
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Kido Osamu
Department of Physics, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
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Oomoto Masayuki
Department of Physics, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
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Ogawa Koji
Department of Physics, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
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Namba Hidetoshi
Department of Physical Science, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Namba Hidetoshi
Department of Physics, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
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Kimura Yuki
Department of Physics, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
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