Electronic States Localized at Surface Defects on Cu(755) Studied by Angle-Resolved Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
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概要
- 論文の詳細を見る
"Regularly stepped" and "defective" surfaces of Cu(755) were prepared by low- and high-temperature annealing, respectively, of a clean specimen. Electronic states on both surfaces were studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation. On the defective Cu(755), we found a new photoelectron peak due to surface defects just below the Fermi level. The dispersion profile of the defect state is derived to be almost flat, which demonstrates the localized nature of the defects. High activity to oxygen adsorption of the defect state was revealed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Ogawa Koji
Department Of Anesthesiology Wakayama Medical University
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Namba Hidetoshi
Department Of Physical Sciences Ritsumeikan University
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Nakanishi Koji
Department Of Cardiovascular Surgery Hiroshima City Hospital
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Ogawa Koji
Department of Physical Sciences, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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Namba Hidetoshi
Department of Physical Sciences, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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Namba Hidetoshi
Department of Physical Science, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Nakanishi Koji
Department of Physical Sciences, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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