Ti-N薄膜のガス放出特性と膜構造

概要

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Hydrogen evolution from Ti-N films and stainless steels (SUS 304) was investigated as a function of temperature. The films were deposited by the HCD-ARE method (activated reactive evaporation using hollow cathode discharge) onto the stainless steel at a substrate temperature of 770 K and negative substrate biases of Vs= -20, -50, -100 and -200 V. The films were found to be effective as outagassing barriers for hydrogen contained in the substrate material. Cross-sectional observation by transmission electron microscopy revealed the microstructure of the films. The mor-phologies varied with the substrate biases : Coarse grains, 1, 000 to 2, 000 Å in size, were observed in the film deposited at Vs = -20 V. Columnar grain structures with a high density of defects were produced at Vs =-50 V. Fine grains of 50 to 100Å were produced at Vs=-200 V. The effect of the Ti-N films as outgassing barriers was discussed in terms of their morphologies.
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