Nb-Sn-Si及びNb-Al-Si系におけるA-15相の欠陥構造と超電導転移温度

概要

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A-15 phases in Nb-Sn-Si and Nb-Al-Si systems were prepared at 1400 or 1600°C and the superconducting transition temperatures (Tc) were measured. In Nb3Sn1-xSix, Tc decreased linearly with increasing the content of Si in samples prepared at 1400°C, but showed a maximum in samples prepared at 1600°C. Nb5Si3 was formed besides A-15 phase at both preparation temperatures, resulting in the formation of a Nb-rich A-15 phase. The Nb-rich A-15 phases had the defect structures in which Nb atoms substitute So atoms on 2a sites at 1400°C and, both Nb and Si atoms locate on 2a sites at 1600°C. In Nb3Al1-xSix system, Tc decreased with increasing the content of Si in samples prepared at 1400 and 1600°C.
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