プレーナ型Metal-Semiconductor-Metal構造における空乏層の光音響信号測定

概要

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The photoacoustic signal from the depletion layer was detected using the photoacoustic method formed within a planar metal-semiconductor-metal (MSM) structure. To measure the distribution of the photoacoustic signal from the depletion layer, the surface of the sample was illuminated and scanned by an intensity-modulated optical-beam. The amplitude and phase shifts of the observed signal increased with an increase in the reverse bias in the Schottky-barrier. The intensity distribution of the photoacoustic signal corresponded closely to the position of the photocurrent distribution showing the presence of the depletion layer measured by the photoelectric method. This demonstrates clearly that the photoacoustic signal reflects the presence of the depletion layer in semiconductor materials, and that the photoacoustic method can be used effectively for visualization of the depletion layer.