Angle-resolved photoemission study of Ga1-xMnxAs
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概要
- 論文の詳細を見る
Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k?[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
- American Physical Societyの論文
- 2001-09-06
著者
-
Rader O.
東大理
-
Kimura A
Univ. Tokyo Chiba
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Fujimori Atsushi
Synchrotron Radiation Research Center Japan Atomic Energy Agency:department Of Physics University Of
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