SiC結晶成長における多形制御 : 速度論的多形制御法の提案(3C-SiC溶液成長を例に)(<特集>準安定相の形成と結晶成長)

概要

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Silicon carbide forms polytypes due to different stacking arrangements of Si and C. For the use of semiconductor materials, it is necessary to fabricate a single polytype material. In this paper, firstly, determination factors of polytypes are introduced from both experimental and theoretical viewpoints, and the difficulty of the polytype control based on thermal stability is shown. Next, the actual control techniques in sublimation growth method and CVD method are shown to be based on the concept that the polytype sequence of seed crystal continues to the grown crystal. Finally, we propose the kinetic polytype control method based on the growth speed difference among polytypes in SiC solution growth.
日本結晶成長学会の論文