イオン注入したダイヤモンド半導体のMeV級イオンビーム照射による電気的活性化の研究 : 高品質ダイヤモンド薄膜の形成と評価の研究(2)

概要

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We have developed a microwave-plasma CVD apparatus for depositing epitaxial diamond layers on the diamond substrates. We reported in 2006 that high-quality diamond epitaxial layers were successfully deposited on these substrates, however, sharp peaks of points several microns high were also observed by using an Atomic Force Microprobe. We attributed these peaks to carbon nanotubes grown on the diamond substrate, because a high density of contamination atoms for species around iron element was detected by the Rutherford Backscattering analysis on the as-purchased diamond substrates. Therefore, in 2007, we adopted some cleaning processes for the diamond substrate surface before deposition, using acidic liquid. We successfully obtained high-quality diamond epitaxial layers without sharp high peaks, however, we observe a uneven hills. These can be attributed to the very small uneven surfaces of the as-purchased diamond substrates, due to inadequate polishing process at the diamond substrate maker. We are now reexamining the polishing process, including the etching process, to obtain clean and flat surfaces of the as-purchased diamond substrates.
神奈川大学の論文
2007-05-25