Analysis of Electrode Materials for Diamond Semiconductors using RBS and PIXE Methods(By a grant of Research Institute for Integrated Science, Kanagawa University)

概要

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We analyzed various sputtering target materials, using Rutherford Backscattering (RBS) method and Proton-Induced X-ray Emission (PIXE) method, and identified the metals required for the electrodes of diamond semiconductors. Before various metals were examined on the diamond substrate, we analyzed these by evaporating them on the Si substrate by using a magnetron CVD sputtering apparatus. Ti was used as an electrode material to make ohmic contact with the diamond semiconductor substrate. Oxygen atoms were detected thickly near the surface by the RBS method, although the purity of Ti sputtering target metal was 99.95%. This oxide film was formed when the Ti film was exposed to air. To prevent Ti film from oxidation, Pt metal is usually deposited on Ti film as a cap layer. Thus, the double-layer Ti-Pt thin film was formed to confirm whether oxidation of Ti film was completely prevented or not, using the RBS measurement method. We have succeeded in obtaining an antioxidant effect of Pt cap film on Ti film, by developing the magnetron CVD processes appropriately.
神奈川大学の論文
2005-05-25