Interdiffusion Analysis of Au/Ti and Au/Pt/Ti Electrode Structures Grown on Diamond (001) Surface by Rutherford Backscattering Spectroscopy

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概要

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• We have directly studied the elemental depth profiles of Au/Ti and Au/Pt/Ti multiple-layers, which are candidates as ohmic materials for a p-type diamond substrate, grown on diamond (001) surfaces at room temperature (RT) and 550 °C using Rutherford backscattering method. Significant interlayer diffusion between Au and Ti is observed for the samples without a sandwiched Pt layer, resulting in diffusion of some Ti atoms to the surface. On the other hand, the trilayer structure of Au/Pt/Ti forms a thermally stable electrode up to 1000 °C. It is also found that the interfacial TiCx layer grown at 550 °C is thicker than that deposited at RT followed by post-deposition annealing at 550 °C. The effective thickness of the Pt layer is estimated to be more than 20 nm to prevent Ti segregation to the surface.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-10-25

著者

• Nakata Jyoji

  Department of Information Science, Faculty of Science, Kanagawa University

• Saito Yasunao

  Department of Information Sciences, Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

• Hoshino Yasushi

  Department of Information Sciences, Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

関連論文

• Analysis of Electrode Materials for Diamond Semiconductors using RBS and PIXE Methods(By a grant of Research Institute for Integrated Science, Kanagawa University)
• Characterization of Hot-Implanted Fe near the SiO2/Si Interface
• Interdiffusion Analysis of Au/Ti and Au/Pt/Ti Electrode Structures Grown on Diamond (001) Surface by Rutherford Backscattering Spectroscopy

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