イオン注入したダイヤモンド半導体のMeV 級イオンビーム照射による電気的活性化の研究－高品質ダイヤモンド薄膜の形成と評価の研究（３）－

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The first aim of our research is to obtain high-quality epitaxial diamond layers onthe diamond substrates using microwave plasma CVD (Chemical Vapor Deposition) method. And the second is to obtain p-type and n-type diamond substrates (or epitaxial layers) using ion implantation method. Epitaxial layers deposited in the year 2006-2007, however, contained much nitrogen atoms near the concentration of Ib-type diamond substrates, that is, several hundreds of ppm. Furthermore, thicknesses of these deposited layers were very thinner thanexpected. We reexamined all deposition processes and apparatus, such as mass-flow-meter of hydrogen and methane gasses, changed the material element of sample-holder from Molybdenum to Carbon, in order to avoid adsorption of Molybdenum atoms during deposition. However, we could not get satisfactory results even after above mentioned improvement. Thus, we have largely changed deposition conditions of microwave plasma CVD processes. As a result, we have obtained high-quality diamond epitaxial layers of several microns thicknesses.These layers contained few nitrogen atoms under the detection limit of secondary ion mass spectroscopy. Furthermore, heavy ions contamination on the epitaxial layers was not entirely observed, as far as Rutherford Backscattering Spectroscopy measurement was concerned. We also observed surface morphology of epitaxial diamond layers on the very flat type-Ib diamond substrates using atomic force microprobe, however, showing considerable amounts of uneven structures. These uneven structures would be made much flatter under the condition of shorter deposition time, corresponding to a few microns thicknesses of epitaxial layers. We implanted Boron ions into type-IIa high-quality diamond substrates, and measured electrical properties of implanted substrates, using Hall-effect measurement method. We found that resistivity of implanted type-IIa diamond substrates show logarithmic increase versus inverse ofabsolute measurement temperature. The activation energies of these samples show different two phases. One is low energy range from 0.2 to 0.4 eV, and the other value is 1.7 eV, The later denotes nitrogen activation, contained in the substrate very little below the 1 ppm concentration The former exhibits activation of defects introduced by ion implantation, or activation of implanted dopant Boron atoms.
2009-06-30

イオン注入したダイヤモンド半導体のMeV 級イオンビーム照射による電気的活性化の研究－高品質ダイヤモンド薄膜の形成と評価の研究（３）－

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イオン注入したダイヤモンド半導体のMeV 級イオンビーム照射による電気的活性化の研究－ 高品質ダイヤモンド薄膜の形成と評価の研究（３）－

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イオン注入したダイヤモンド半導体のMeV 級イオンビーム照射による電気的活性化の研究－高品質ダイヤモンド薄膜の形成と評価の研究（３）－