2011年度神奈川大学総合理学研究所共同研究助成論文高温イオン注入形成Fe微粒子からの単層カーボンナノチューブ成長 : マイクロ波によるSiO膜エッチングとCVD条件の検討

概要

論文の詳細を見る
原著　2011 年度神奈川大学総合理学研究所共同研究助成論文We have studied a novel process of carbon nanotube （CNT）growth from nanoparticles formed by hot ion-implantation in a SiO2／Si structure．We successfully achieved Single‐walled CNT （SWCNT）growth from Fe‐implanted SiO2 films by microwave‐plasmaenhanced chemical vapor deposition（MPCVD）．We also succeeded in fabricating these SWCNTs at temperatures as low as 400℃．The growth of almost defect‐free SWCNTs was successfully achieved by optimizing MPCVD growth time and power．These results were confirmed by the disappearance of a D‐band peak and by the appearance of intense radialbreathing‐mode peak in the micro Raman spectrum．We also clarified the etching and CVD processes via CH4/H2 plasma induced by microwave．
神奈川大学総合理学研究所の論文