高温イオン注入形成Fe 微粒子からの単層カーボンナノチューブ成長－マイクロ波によるSiO2 膜エッチングとCVD 条件の検討－

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原著　2011 年度神奈川大学総合理学研究所共同研究助成論文We have studied a novel process of carbon nanotube （CNT）growth from nanoparticles formed by hot ion-implantation in a SiO2／Si structure．We successfully achieved Single‐walled CNT （SWCNT）growth from Fe‐implanted SiO2 films by microwave‐plasmaenhanced chemical vapor deposition（MPCVD）．We also succeeded in fabricating these SWCNTs at temperatures as low as 400℃．The growth of almost defect‐free SWCNTs was successfully achieved by optimizing MPCVD growth time and power．These results were confirmed by the disappearance of a D‐band peak and by the appearance of intense radialbreathing‐mode peak in the micro Raman spectrum．We also clarified the etching and CVD processes via CH4/H2 plasma induced by microwave．
2012-06-30