Low-Damage Gate Etching With High Degree of Anisotropy in High-Density DRAM Cell

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Pressure Dependence of the Formation of YBaCuO Films by Chemical Vapor Deposition
Fabrication and Characterization of Ru Thin Films Prepared by Liquid Delivery Metal-Organic Chemical Vapor Deposition
Effect of Poly Metal Gate Etch Post-Cleaning on the Tail Distribution of DRAM Data Retention Time
Impact of Gate Etch Damage and Profile in High Density DRAM Cell
Suppression of Anomalous Edge Channel Effect for 0.15μm DRAM Cell and Beyond
Impact of Polymetal Gate Etch Post-Cleaning on Data Retention Time in Sub-micron DRAM Cells
Low-Damage Gate Etching With High Degree of Anisotropy in High-Density DRAM Cell
DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In
Impact of NF_3-Added Interlayer Dielectric High Density Plasma Process on Hump Effect in Submicron n-type Metal Oxide Silicon Field Effect Transistor
Preparation and Characterization of RuO_x Thin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition
DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In
Impact of NF3-Added Interlayer Dielectric High Density Plasma Process on Hump Effect in Submicron n-type Metal Oxide Silicon Field Effect Transistor
Impact of Ti Deposition and Subsequent RTA Process on Contact Resistivity Characteristics of W-Bit Line in Sub-Micron Dynamic Random Access Memory

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