DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In
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概要
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The circuit to apply dynamic operation stress (DOS) to dynamic random access memory (DRAM) cell in wafer burn-in (WBI) mode is successfully implemented. We have verified that the degradation of data retention time occurred during burn-in (BI) test is mainly attributed to DOS-induced hot carrier (HC) degradation of DRAM cell. The characterization result of DRAM reliability by DOS-applying method in WBI mode is a good agreement with that by real operation stress in package burn-In (PBI) mode.
- 2003-04-15
著者
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Park Joo-seog
Memory R&d Division Hynix Semiconductor Inc.
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Kim Il-gweon
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam-sung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam-Sung
Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong-dong Heungduk-gu, Cheongju Chungbuk 361-725, Korea
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Park Joo-Seog
Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong-dong Heungduk-gu, Cheongju Chungbuk 361-725, Korea
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Kim Il-Gweon
Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong-dong Heungduk-gu, Cheongju Chungbuk 361-725, Korea
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