Park Joo-seog | Memory R&d Division Hynix Semiconductor Inc.

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著作論文

Suppression of Anomalous Edge Channel Effect for 0.15μm DRAM Cell and Beyond
Impact of Polymetal Gate Etch Post-Cleaning on Data Retention Time in Sub-micron DRAM Cells
Low-Damage Gate Etching With High Degree of Anisotropy in High-Density DRAM Cell
DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In
Impact of NF_3-Added Interlayer Dielectric High Density Plasma Process on Hump Effect in Submicron n-type Metal Oxide Silicon Field Effect Transistor
DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In
Impact of NF3-Added Interlayer Dielectric High Density Plasma Process on Hump Effect in Submicron n-type Metal Oxide Silicon Field Effect Transistor
Impact of Ti Deposition and Subsequent RTA Process on Contact Resistivity Characteristics of W-Bit Line in Sub-Micron Dynamic Random Access Memory

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