InGaAs/AlGaAs多重量子井戸を用いた電流狭窄型発光ダイオードの低劣化挙動

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Degradation behavior of an InGaAs/AlGaAs Multi Quantum Well (MQW) light emitting diode (LED) was investigated. The LED has a current confinement structure that results in a pin-point light source. The low degradation behavior was confirmed compared with a conventional current confinement structure LED with a bulk GaAs active layer. The failure rate of the MQW LED is lower than 20 Fit, which is much lower than the Bulk GaAs LED. The characteristics of the degraded LEDs with the respective structures were different. Dark areas, such as dark line defects, or dark spot defects were observed in the emitting areas of both the LEDs after a long life test. It is well known that such defects act as non-radiative recombination centers for injected carriers, and cause large degradations. However, in the MQW LED, the emitted light was not so degraded as the dark area increased. On the other hand, for the bulk GaAs LED, the degradation of the emitted light and the dark area were correlated. By a transmission electron microscope the defects were observed in the active layer of the dark area of the MQW LED, and by a scanning sheet resistance microscope, it has been clarified that the electrical resistivity of the active layer of the dark area is high for the MQW LED. Therefore, the electric current will not pass the dark area. The high resistivity may be due to the defects. However, it is not clarified and the further investigation is now in progress.
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InGaAs/AlGaAs多重量子井戸を用いた電流狭窄型発光ダイオードの低劣化挙動

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