スピン偏極電子線源

概要

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Spin-polarized electron sources have been developed using a GaAs strained layer, an InGaAs-AlGaAs superlattice, and a GaAs-GaAsP superlattice. Polarized electrons are obtainable by irradiating semiconductors of zincblende lattice structures such as GaAs with circularly polarized photons. In the case of GaAs, polarization is restricted to under 50% because of the degeneracy of the heavy-hole and light-hole states in the valence band. The degeneracy is removed in strained layers or superlattices. By exciting electrons from only one of the states of the valence band, which is close to the conduction band, polarized electron beams are obtained, and the degree of polarization is as high as 80%. Quantum efficiencies of more than 0.1% have been obtained with the high polarization. The developed sources have been applied to high-energy physics and have potential applications in solid-state physics.
社団法人日本磁気学会の論文
2001-01-01