MOCVD法により作成したGaAlAs系薄膜結晶の特性について

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High quality Ga1-x AlxAs epitaxial layers were grown on the GaAs substrates by newly developed atmospheric vertical reactor type metal organic chemical vapor deposition apparatus (MOCVD). The influence of the growth conditions on the characteristics of the epitaxial layers was investigated.The results obtained were summarized as follows:(1) The growth rates were determined by the flow rate of group III elements and changeable between 15.5 and 138nm/min.(2) The ratio x of Ga1-xAlxAs alloys were determined by the amount of TMA. The relation between them was linear and agreed with calculated value.(3) The carrier concentrations were controlled by the dopant mole fraction of DEZ/(TMG+TMA) and H2Se/AsH3 for p- and n-type, respectively.(4) The epitaxial layers of uniform thickness and crystallinity were obtained on the substrate of 2″ size.(5) High electron mobility and low EL2 concentration in GaAs epitaxial layers were confirmed to be grown under the condition of Tg=750°C and V/III=60.(6) Abrupt GaAs/GaAlAs hetero interface and p/n junction were obtained.The quality of the layers obtained was high enough to be applicable for opto-electronics and high electron mobility devices.
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